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RF FETs AFV121KGSR5
NXP
AFV121KGSR5
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Diodes, Transistors and Thyristors
RF FETs
AFV121KGSR5.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
Maximum VSWR20
ConfigurationDual Common Source
Package Width10.29(Max)
Package Height5.08(Max)
Package Length32.39(Max)
Output Power (W)1410(Typ)
Supplier PackageNI-1230S
Maximum IDSS (uA)10
Mode of OperationPulse
Process TechnologyLDMOS
Maximum Frequency (MHz)1215
Minimum Frequency (MHz)960
Typical Power Gain (dB)19.6
Number of Elements per Chip2
Typical Drain Efficiency (%)59.7
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)112
Maximum Gate Threshold Voltage (V)2.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Gate Source Leakage Current (nA)1000
Typical Reverse Transfer Capacitance @ Vds (pF)2.5@50V
Description
Trans RF FET N-CH 112V 5-Pin NI-1230S T/R
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