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RF2L27025CG2
RF2L27025CG2
RF FETs RF2L27025CG2
STMicroelectronics
RF2L27025CG2
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Diodes, Transistors and Thyristors
RF FETs
RF2L27025CG2.pdf
Specification
Product AttributeAttribute Value
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Maximum VSWR10
ConfigurationSingle
Package Width6.86
Package Height2.87
Package Length6.86
Output Power (W)25(Typ)
Supplier PackageCase E2
Maximum IDSS (uA)1
Mode of OperationPulsed CW
Process TechnologyLDMOS
Maximum Frequency (MHz)2700
Minimum Frequency (MHz)700
Typical Power Gain (dB)18
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Typical Drain Efficiency (%)50
Maximum Gate Source Voltage (V)10
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Maximum Drain Source Resistance (mOhm)1000@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans RF MOSFET 65V 3-Pin Case E2 T/R
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