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2N5430
2N5430
GP BJT 2N5430
Microchip Technology
2N5430
--
Diodes, Transistors and Thyristors
GP BJT
2N5430.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
TabTab
PPAPNo
TypeNPN
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusUnconfirmed
ConfigurationSingle
Package Width17.78
Package Height8.64(Max)
Package Length24.43(Max) + 7.36
Product CategoryBipolar Power
Supplier PackageTO-66
Standard Package NameTO
Minimum DC Current Gain60@500mA@2V|60@2A@2V|40@5A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Maximum DC Collector Current (A)7
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)100
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-65
Operating Junction Temperature (°C)-65 to 200
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)10000
Maximum Base Emitter Saturation Voltage (V)1.2@0.2A@2A|2@0.7A@7A
Maximum Collector-Emitter Saturation Voltage (V)0.7@0.2A@2A|1.2@0.7A@7A
Description
Trans GP BJT NPN 100V 7A 40000mW 3-Pin(2+Tab) TO-66
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