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MOSFETs IRHNA57163SE
Infineon
IRHNA57163SE
--
Diodes, Transistors and Thyristors
MOSFETs
IRHNA57163SE.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)Contact Export
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width17.65(Max)
Package Height3.07(Max)
Package Length13.46(Max)
Product CategoryPower MOSFET
Supplier PackageSMD-2
Standard Package NameSMD
Typical Fall Time (ns)50(Max)
Typical Rise Time (ns)125(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ Vgs (nC)160(Max)@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)35(Max)
Maximum Drain Source Voltage (V)130
Typical Turn-Off Delay Time (ns)80(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)75
Typical Input Capacitance @ Vds (pF)5020@25V
Maximum Drain Source Resistance (MOhm)13.5@12V
Description
Trans MOSFET N-CH 130V 75A 3-Pin SMD-2
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