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BLP8G20S-80PY
BLP8G20S-80PY
RF FETs BLP8G20S-80PY
NXP
BLP8G20S-80PY
--
Diodes, Transistors and Thyristors
RF FETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
Maximum VSWR10
ConfigurationDual Common Source
Package Width9.96
Package Height3.6
Package Length20.57
Output Power (W)14.2(Typ)
Supplier PackageHSOP-F
Maximum IDSS (uA)1.2
Mode of Operation2-Carrier W-CDMA
Process TechnologyLDMOS
Maximum Frequency (MHz)2200
Minimum Frequency (MHz)1800
Typical Power Gain (dB)17.5
Number of Elements per Chip2
Typical Drain Efficiency (%)33
Maximum Gate Source Voltage (V)13
Maximum Drain Source Voltage (V)65
Maximum Gate Threshold Voltage (V)2.25
Maximum Operating Temperature (°C)225
Minimum Operating Temperature (°C)-65
Typical Forward Transconductance (S)0.41
Maximum Drain Source Resistance (mOhm)320(Typ)@3.75V
Maximum Gate Source Leakage Current (nA)120
Description
Trans RF MOSFET N-CH 65V 4-Pin HSOP-F T/R
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